Título

Hole states in diamond p-delta-doped field effect transistors

Autor

ISAAC RODRIGUEZ VARGAS

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/licenses/by-nc-nd/4.0

Materias

CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) p-delta-doping in diamond e high density two-dimensional hole gases local-density Thomas-Fermi-based

Resumen o descripción

The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the

contact potential, the delta-channel to contact distance, and the ionized impurity density.

Producción Científica de la Universidad Autónoma de Zacatecas UAZ

Fecha de publicación

2009

Tipo de publicación

Artículo

Recurso de información

http://localhost/xmlui/handle/20.500.11845/817

1742-6588

Formato

application/pdf

Idioma

Inglés

Audiencia

Público en general

Repositorio Orígen

Repositorio Institucional Caxcán

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