Título

Subband and transport calculations in double -type -doped quantum wells in Si

Autor

ISAAC RODRIGUEZ VARGAS

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/licenses/by-nc-nd/4.0

Materias

CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) Thomas-Fermi approximation double n-type Hartree-Fock potential

Resumen o descripción

The Thomas-Fermi approximation is implemented in two coupled n-type -doped quantum wells in

Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the

subband level structure. The longitudinal and transverse levels are obtained as a function of the

impurity density and the interlayer distance. The exchange-correlation effects are analyzed from an

impurity density of 8 1012 to 6.5 1013 cm−2. The transport calculations are based on a formula

for the mobility, which allows us to discern the optimum distance between wells for maximum

mobility.

Producción Científica de la Universidad Autónoma de Zacatecas UAZ

Fecha de publicación

febrero de 2006

Tipo de publicación

Artículo

Recurso de información

http://hdl.handle.net/20.500.11845/632

‎0021-8979

1089-7550

Formato

application/pdf

Idioma

Inglés

Audiencia

Público en general

Repositorio Orígen

Repositorio Institucional Caxcán

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