Título
Thomas–Fermi–Dirac calculations of valence band states in two p-type delta-doped ZnSe quantum wells
Autor
ISAAC RODRIGUEZ VARGAS
Nivel de Acceso
Acceso Abierto
Materias
Resumen o descripción
We present the hole sub-band structure study in two p-type δ-doped ZnSe QW’s. An analytical expression
for the Hartree–Fock potential is obtained following the lines of the Thomas–Fermi–Dirac (TFD) approximation.
We have analyzed the dependence of the hole energy levels to the impurity density and the
interlayer distance between wells. The exchange effects are also included in the present survey. We find
that many body effects cannot be ignored because these are really important in the calculation at least in
the low concentration regime. We have obtained an energy difference between the top of the valence band
and the ground energy of the heavy hole ladder of E0 = 29.0 meV 0 ( 2 791eV) g E - E = . in good agreement
with the experimental reports ( DAP E = 2.792 eV) available. We calculate the mobility ratio between
double δ-doped QW’s and simple δ-doped QW based on a phenomenological formula. We find the optimum
interlayer distance between wells for maximum mobility for three impurity concentrations, which
can be of great importance for technological applications.
Producción Científica de la Universidad Autónoma de Zacatecas UAZ
Fecha de publicación
febrero de 2005
Tipo de publicación
Artículo
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Público en general
Repositorio Orígen
Repositorio Institucional Caxcán
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