Título

Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field

Autor

JUAN CARLOS MARTINEZ OROZCO

ISAAC RODRIGUEZ VARGAS

Nivel de Acceso

Acceso Abierto

Resumen o descripción

In this work, the conduction band electron states and the associated intersubband-related linear and nonlinear optical absorption coefficient and relative refractive index change are calculated for an asymmetric double n-type δ-doped quantum well in a GaAs-matrix. The effects of an external applied static electric field are included. Values of the two-dimensional impurities density (N2d) of each single δ-doped quantum well are taken to vary within the range of 1.0×1012 to 7.0×1012 cm−2, consistent with the experimental data growth regime. The optical responses are reported as a function of the δ-doped impurities density and the applied electric field. It is shown that single electron states and the related optical quantities are significantly affected by the structural asymmetry of the double δ-doped quantum well system. In addition, a brief comparison with the free-carrier-related optical response is presented.

Producción Científica de la Universidad Autónoma de Zacatecas UAZ

Fecha de publicación

marzo de 2014

Tipo de publicación

Artículo

Formato

application/pdf

Idioma

Inglés

Audiencia

Público en general

Repositorio Orígen

Repositorio Institucional Caxcán

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