Título

Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters

Autor

Fabián Zárate Rincón

GERMAN ANDRES ALVAREZ BOTERO

Reydezel Torres Torres

Roberto Stack Murphy Arteaga

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/licenses/by-nc-nd/4.0

Materias

DC methods - (INSPEC) Physical parameters of MOSFET - (INSPEC) RF-MOSFET - (INSPEC) Two-port S-parameter measurements. - (INSPEC) CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI) ELECTRÓNICA - (CTI)

Resumen o descripción

Using a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, atwo-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein presented. In addition to obtaining S-parameters at different bulk-to-source voltages using a single two-port configured test-fixture, the proposal allows the analysis of the electrical parameters of a MOSFET that are influenced by the substrate effect when the frequency rises. Physically expected results are obtained for device’s model parameters, allowing to accurately reproduce S-parameters up to 20 GHz. Furthermore, extracted parameters, such as threshold voltage, are in agreement with those obtained using well-established DC methods. This method allows one to characterize a four-terminal MOSFET from two-port small-signal measurements.

Editor

IEEE Transactions on Electron Devices

Fecha de publicación

agosto de 2013

Tipo de publicación

Artículo

Versión de la publicación

Versión aceptada

Recurso de información

http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2389

Formato

application/pdf

Idioma

Inglés

Audiencia

Estudiantes

Investigadores

Público en general

Sugerencia de citación

Zárate-Rincón, Fabián, et al., (2013), Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters, IEEE Transactions on Electron Devices, Vol. 60(8):2450-2456

Repositorio Orígen

Repositorio Institucional del INAOE

Descargas

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