Título

Analysis of threshold voltage fluctuations due to short channel and random doping effects

Autor

FRANCISCO JAVIER DE LA HIDALGA WADE

Nivel de Acceso

Acceso Abierto

Licencia

http://creativecommons.org/licenses/by-nc-nd/4.0

Materias

Threshold Voltage - (INSPEC) Short Channel Effects - (INSPEC) MOSFET - (INSPEC) 2-D Simulations - (INSPEC) CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI) ELECTRÓNICA - (CTI)

Resumen o descripción

A two-dimensional (2-D) simulation study of short channel and random dopant effects on threshold voltage lowering and fluctuations in 90 nm MOSFET’s is presented. The systematic analysis of short channel and random dopant effects was carried out in 2-D on a scale to provide quantitative predictions. Simulations based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. Both short channel and random dopant effects, on threshold voltage fluctuations are simulated and discussed in MOSFET’s. The simulation results will be the start point for the analysis of threshold voltage fluctuations through the comparison with analytical models based on dopant number fluctuations. The simulations show that the threshold voltage fluctuations are principally determined by the fluctuation in the dopant number.

Editor

Superficies y Vacío

Fecha de publicación

marzo de 2013

Tipo de publicación

Artículo

Versión de la publicación

Versión aceptada

Recurso de información

http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2290

Formato

application/pdf

Idioma

Inglés

Audiencia

Estudiantes

Investigadores

Público en general

Sugerencia de citación

Jiménez, A., et al., (2013), Analysis of threshold voltage fluctuations due to short channel and random doping effects, Superficies y Vacío, Vol. 26(1):1-3

Repositorio Orígen

Repositorio Institucional del INAOE

Descargas

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