Title

Electrical characterization of planarized a-SiGe:H Thin-film Transistors

Author

Miguel Dominguez

Pedro Rosales Quintero

ALFONSO TORRES JACOME

Access level

Open Access

Summary or description

In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200°C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 10⁶ and off-current approximately of 0.3x10⁻¹² A. The results show an improvement of the electrical characteristics when are compared to those unplanarized devices fabricated at higher temperature. Moreover, the simulation of the device using a SPICE model is presented.

Publisher

Revista Mexicana de Física

Publish date

January, 2013

Publication type

Article

Publication version

Accepted Version

Format

application/pdf

Language

English

Audience

Students

Researchers

General public

Citation suggestion

Dominguez, M., et al., (2013). Electrical characterization of planarized a-SiGe:H Thin-film Transistors, Revista Mexicana de Física, Vol. 59(1):62–65

Source repository

Repositorio Institucional del INAOE

Downloads

38

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