Título
Noise in micro-bolometers with silicon-germanium thermo-sensing layer
Autor
ANDREY KOSAREV
MARIO MORENO MORENO
ALFONSO TORRES JACOME
Sergey N. Rumyantsev
ISMAEL COSME BOLAÑOS
Nivel de Acceso
Acceso Abierto
Materias
Silicon-germanium films - (SILICON-GERMANIUM FILMS) Plasma deposition - (PLASMA DEPOSITION) Electrical properties and measurements - (ELECTRICAL PROPERTIES AND MEASUREMENTS) Electronic devices - (ELECTRONIC DEVICES) CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA - (CTI) FÍSICA - (CTI) ELECTRÓNICA - (CTI) ELECTRÓNICA - (CTI)
Resumen o descripción
Low frequency noise in a-SixGey:H thermo-sensing films, on glass and in micro-bolometers of planar and sandwich structures based on the same material has been studied at different temperatures. The noise spectra had the form of the 1/f-like noise with the frequency exponent within the range of 0.8 to 1.6 depending on the sample and temperature. In the temperature range from T = 340 to 400 K the amplitude of the noise and current (at constant voltage) increased. These dependences can be described as a thermal activated process with energies of EaS/I = 0.63 eV and Eafilm = 0.34 eV for relative spectral noise density of the current fluctuations and DC current, respectively.
Editor
Elsevier B.V.
Fecha de publicación
2010
Tipo de publicación
Artículo
Versión de la publicación
Versión aceptada
Recurso de información
Formato
application/pdf
Idioma
Inglés
Audiencia
Estudiantes
Investigadores
Público en general
Sugerencia de citación
Kosarev, A., et al., (2010). Noise in micro-bolometers with silicon-germanium thermo-sensing layer, Thin Solid Films, (518): 3310–3312
Repositorio Orígen
Repositorio Institucional del INAOE
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